CBSE Class XII • Unit 02 (Current Electricity)[cite: 12, 13]
Chapter 03: Current Electricity
Master Revision Dossier • Transport Equations, Microscopic Ohm's Law, Cell Matrices & Bridge Laws
Open Access Initiative
Unit I & II Bracket: 16 Marks[cite: 12]
1. Definitive Formula & Physical Transport Matrix
| Concept | Mathematical Formulation | SI Unit / Dim | Boundary Conditions & Notes |
|---|---|---|---|
| Electric Current ($I$)[cite: 13] | $$I = \frac{dQ}{dt} = n e A v_d\text{[cite: 13]}$$ | $\text{Ampere (A)}$ $[\text{A}]$ |
Scalar quantity (obeys algebraic addition, not vector law)[cite: 13]. Current density $\vec{J} = (I/A)\hat{n}$ is a true vector[cite: 13]. |
| Drift Velocity ($v_d$)[cite: 13] | $$\vec{v}_d = -\frac{e\vec{E}}{m}\tau \implies v_d = \frac{eE\tau}{m}\text{[cite: 13]}$$ | $\text{m/s}$ $[\text{LT}^{-1}]$ |
Net average velocity acquired against field $\vec{E}$[cite: 13]; order of magnitude $\approx 10^{-4}\text{ m/s}$ ($0.1\text{ mm/s}$)[cite: 13]. |
| Mobility ($\mu$)[cite: 13] | $$\mu = \frac{|\vec{v}_d|}{E} = \frac{e\tau}{m}\text{[cite: 13]}$$ | $\text{m}^2/\text{V}\cdot\text{s}$ $[\text{M}^{-1}\text{T}^2\text{A}]$ |
Defined as positive scalar[cite: 13]. Electron mobility $\mu_e$ is significantly higher than hole mobility $\mu_h$ ($m_e < m_h$). |
| Resistivity ($\rho$) & $\sigma$[cite: 13] | $$\rho = \frac{m}{n e^2 \tau}, \quad \sigma = \frac{1}{\rho} = \frac{n e^2 \tau}{m}\text{[cite: 13]}$$ | $\rho: \Omega\cdot\text{m}$ $\sigma: \text{S}\cdot\text{m}^{-1}$ |
Independent of conductor dimensions ($l, A$)[cite: 13]; depends strictly on material and temperature[cite: 13]. |
| Microscopic Ohm's Law[cite: 13] | $$\vec{J} = \sigma \vec{E} = \frac{\vec{E}}{\rho}\text{[cite: 13]}$$ | $\vec{J}: \text{A/m}^2$ | Universal vector form[cite: 13]. Macroscopic scalar equivalent: $V = IR$, where $R = \rho \frac{l}{A}$[cite: 13]. |
| Temperature Dependence[cite: 13] | $$R_T = R_0[1 + \alpha(T - T_0)]\text{[cite: 13]}$$ | $\alpha: \text{K}^{-1} \text{ or } ^\circ\text{C}^{-1}$ | Metals: $\alpha > 0$[cite: 13]; Semiconductors: $\alpha < 0$[cite: 13]; Standard Alloys (Manganin, Nichrome): $\alpha \approx 0$[cite: 13]. |
| Cell Terminal Voltage[cite: 13] | $$V = \mathcal{E} - Ir \quad (\text{Discharge})\text{[cite: 13]}$$ | $\text{Volt (V)}$ | Open circuit: $V = \mathcal{E}$[cite: 13]. During battery recharge: $V = \mathcal{E} + Ir$. Internal resistance $r = (\frac{\mathcal{E}}{V}-1)R$[cite: 13]. |
| Cells in Series[cite: 13] | $$\mathcal{E}_{\text{eq}} = \sum \mathcal{E}_i, \quad r_{\text{eq}} = \sum r_i\text{[cite: 13]}$$ | $\text{V}, \Omega$ | If $m$ out of $n$ cells are reversed: $\mathcal{E}_{\text{eq}} = (n - 2m)\mathcal{E}$, while $r_{\text{eq}} = nr$ always. |
| Cells in Parallel[cite: 13] | $$\mathcal{E}_{\text{eq}} = \frac{\sum \mathcal{E}_i/r_i}{\sum 1/r_i}, \quad \frac{1}{r_{\text{eq}}} = \sum \frac{1}{r_i}\text{[cite: 13]}$$ | $\text{V}, \Omega$ | For two cells: $\mathcal{E}_{\text{eq}} = \frac{\mathcal{E}_1 r_2 + \mathcal{E}_2 r_1}{r_1 + r_2}$, $r_{\text{eq}} = \frac{r_1 r_2}{r_1 + r_2}$[cite: 13]. |
| Wheatstone Bridge Balance[cite: 13] | $$\frac{P}{Q} = \frac{R}{S} \iff I_g = 0\text{[cite: 13]}$$ | Dimensionless | Galvanometer current is zero ($V_B = V_D$)[cite: 13]. Bridge retains balance if battery and detector are interchanged. |
2. Core Derivations Blueprint (Step-by-Step Board Proofs)[cite: 13]
Blueprint 3.1: Relation between Electric Current and Drift Velocity ($I = n e A v_d$)[cite: 13]
1. Consider a uniform conductor of cross-sectional area $A$, length $l$, and free electron density $n$[cite: 13].
2. Under electric field $\vec{E}$, electrons drift with average speed $v_d$[cite: 13]. In time interval $\Delta t$, distance covered is $\Delta x = v_d \Delta t$[cite: 13].
3. Total volume of electrons crossing the plane in time $\Delta t$[cite: 13]: $\Delta V = A \cdot \Delta x = A (v_d \Delta t)$.
4. Total charge transported across the area[cite: 13]:
5. Dividing by time interval $\Delta t$ yields the fundamental relation[cite: 13]:
Blueprint 3.2: Microscopic Deduction of Ohm's Law and Resistivity ($V = IR$, $\rho = \frac{m}{ne^2\tau}$)[cite: 13]
1. Drift velocity expression under acceleration $\vec{a} = -\frac{e\vec{E}}{m}$ with mean relaxation time $\tau$[cite: 13]: $v_d = \frac{e E \tau}{m}$.
2. Substitute $v_d$ into the transport current equation $I = n e A v_d$[cite: 13]:
3. In a conductor of length $l$ across potential difference $V$, uniform electric field is $E = \frac{V}{l}$[cite: 13]:
4. At constant physical temperature, the bracketed term is a constant defined as Resistance $R$[cite: 13]:
Blueprint 3.3: Balanced Wheatstone Bridge Condition via Kirchhoff's Rules ($P/Q = R/S$)[cite: 13]
1. Apply KVL to Loop 1 ($ABDA$) containing resistors $P, R$ and galvanometer $G$:
2. Apply KVL to Loop 2 ($BCDB$) containing resistors $Q, S$ and galvanometer $G$:
3. At balanced condition, galvanometer current is zero: $I_g = 0$ ($V_B = V_D$)[cite: 13].
4. Dividing the two resulting equations yields the balancing condition[cite: 13]:
3. High-Yield "Red Alert" Exam Trap Matrix
Master Trap 1: Temperature Dependence & Conduction Mechanisms[cite: 13]
| Class of Material | Thermal Coeff ($\alpha$) | Microscopic Governing Factor | Exam Trap Point |
|---|---|---|---|
| Metals (Cu, Al)[cite: 13] | Positive ($\alpha > 0$)[cite: 13] | $n$ is fixed; lattice vibrations shorten relaxation time $\tau$ ($\rho \propto 1/\tau$)[cite: 13]. | When cooled to $0\text{ K}$, resistivity approaches near zero (superconductivity). |
| Semiconductors (Si, Ge)[cite: 13] | Negative ($\alpha < 0$)[cite: 13] | Thermal generation makes $n$ surge exponentially, dominating any drop in $\tau$[cite: 13]. | At $0\text{ K}$, semiconductors behave as perfect insulators ($R \to \infty$). |
| Alloys (Manganin, Constantan)[cite: 13] | Nearly Zero ($\alpha \approx 0$)[cite: 13] | High structural disorder causes extreme scattering regardless of temperature[cite: 13]. | Chosen exclusively for standard resistance boxes and bridge wires[cite: 13]. |
⚠️ Trap 2: Terminal Voltage vs EMF Boundary States[cite: 13]
• Discharging (Delivering power): $V = \mathcal{E} - Ir < \mathcal{E}$[cite: 13]
• Open Circuit ($I = 0$): $V = \mathcal{E}$[cite: 13]
• Charging (Battery Charger active): $\mathbf{V = \mathcal{E} + Ir > \mathcal{E}}$
• Short Circuit ($R = 0$): $V = 0$, $I_{\text{sc}} = \mathcal{E}/r$[cite: 13]
⚠️ Trap 3: Wire Stretching Rules ($R \propto l^2$)
Volume $V = A \cdot l$ is conserved during stretching[cite: 13]. Thus, $A \propto 1/l \implies R = \rho \frac{l}{A} \propto l^2 \propto \frac{1}{r^4}$.
• For small fractional changes ($< 5\%$): $\frac{\Delta R}{R} \approx 2\left(\frac{\Delta l}{l}\right)$.
• If length is doubled ($l' = 2l$): $R' = 4R$ ($\mathbf{300\%}$ increase, NOT $100\%$)!
4. Handcrafted Exemplars (Analytical Numerical Solutions)
Resistance of a platinum thermometer is $5.00\text{ }\Omega$ at ice point ($0^\circ\text{C}$) and $5.39\text{ }\Omega$ at steam point ($100^\circ\text{C}$)[cite: 13]. When placed in a hot bath, resistance is $5.795\text{ }\Omega$. Determine bath temperature[cite: 13].
Solution: Given $R_0 = 5.00\text{ }\Omega$, $R_{100} = 5.39\text{ }\Omega$, $R_t = 5.795\text{ }\Omega$[cite: 13].
Two cells $\mathcal{E}_1 = 2\text{ V}, r_1 = 1\text{ }\Omega$ and $\mathcal{E}_2 = 1\text{ V}, r_2 = 2\text{ }\Omega$ are connected in parallel and feed an external resistor $R = 10\text{ }\Omega$[cite: 13]. Find terminal voltage and branch currents[cite: 13].
Solution:
1. Equivalent cell parameters[cite: 13]:
2. Total load current and terminal potential difference[cite: 13]:
3. Individual branch currents: $I_1 = \frac{2 - 1.5625}{1} = +0.4375\text{ A}$ (discharging), $I_2 = \frac{1 - 1.5625}{2} = -0.28125\text{ A}$ (charging!).
5. Printable Pocket Flashcard Grid
Transport Current
$I = n e A v_d$[cite: 13]
Resistivity Formula
$\rho = \frac{m}{n e^2 \tau}$[cite: 13]
Discharging Cell
$V = \mathcal{E} - Ir$[cite: 13]
Wheatstone Null
$\frac{P}{Q} = \frac{R}{S} \iff I_g=0$[cite: 13]